Device model for pulsing in silicon p-i-n structures

We report experimental data and modeling results based on device physics and circuit parameters for the spontaneous firing patterns for silicon p-i-n structures at 4.2 K controlled by a constant current source. The model provides insights into the sensitivity of the pulsing rate and explains the wide range of behavior. observed. The knowledge on the effect of these parameters on pulsing is critical for designing uniform arrays, which will have a major impact on applications such as infrared detectors and neural net models. The model will also serve as the first step towards obtaining high temperature pulsing arrays using quantum well structures.